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MDF7N50のメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | MDF7N50 |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDF7N50ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MDF7N50
N-Channel MOSFET 500V, 7.0 A, 0.9Ω
General Description
The MDF7N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF7N50 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 500V
ID = 7.0A
RDS(ON) ≤ 0.9Ω
Applications
Power Supply
HID
Lighting
@ VGS = 10V
@ VGS = 10V
D
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
7.0
4.2
28
36
0.29
4.5
270
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
3.5
Unit
oC/W
Dec. 2009. Version 1.2
1 MagnaChip Semiconductor Ltd.
1 Page 20
18 Vgs=5.5V
=6.0V
16 =6.5V
=7.0V
14 =8.0V
=10.0V
12
10
Notes
8 1. 250㎲ PulseTest
6 2. TC=25℃
4
2
0
0 2 4 6 8 10 12 14 16
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
18
20
1.8
※ Notes :
1.6
1. VGS = 10 V
2. ID = 5 A
1.4
1.2
1.0
VGS=10V
VGS=4.5V
0.8
0.6
-50
-25
0 25 50 75 100
TJ, Junction Temperature [oC]
125
Fig.3 On-Resistance Variation with
Temperature
150
1.75
1.50
1.25
1.00
VGS=10.0V
VGS=20V
0.75
0.50
0
5 10 15
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150℃
25℃
-55℃
1
456789
VGS [V]
Fig.5 Transfer Characteristics
10
Dec. 2009. Version 1.2
3
100
※ Notes :
1. V = 0 V
GS
2. ID = 250㎂
10
150℃
1
25℃
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
3Pages Worldwide Sales Support Locations
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Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : [email protected]
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E-Mail : [email protected]
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Email : [email protected]
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
\
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Dec. 2009. Version 1.2
6 MagnaChip Semiconductor Ltd.
6 Page | |||
ページ | 合計 : 6 ページ | ||
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