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IRGP4063D-EPBF の電気的特性と機能

IRGP4063D-EPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGP4063D-EPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGP4063D-EPBF Datasheet, IRGP4063D-EPBF PDF,ピン配置, 機能
IRGP4063DPbF
IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 48A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
E
GC
IRGP4063DPbF
G
E
C
G
IRGP4063D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
VCES
Parameter
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
IF @ TC = 25°C
IF @ TC = 100°C
IF M
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96
48
200
192
96
48
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
0.92
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
March 15, 2013

1 Page





IRGP4063D-EPBF pdf, ピン配列
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
IRGP4063DPbF/IRGP4063D-EPbF
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
10
10μsec
100μsec
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
1000
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
200
180
160 VGE = 18V
140
VGE = 15V
VGE = 12V
120
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3 www.irf.com © 2013 International Rectifier
100
10
1
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
1000
200
180
160 VGE = 18V
140 VGE = 15V
120
VGE = 12V
VGE = 10V
100 VGE = 8.0V
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
March 15, 2013


3Pages


IRGP4063D-EPBF 電子部品, 半導体
45
40
35
30
25
20
15
10
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
IRGP4063DPbF/IRGP4063D-EPbF
4000
3500
3000
96A
2500 100Ω
2000
48A 10Ω
22Ω
47Ω
24A
1500
1000
0
500
1000
1500
diF /dt (A/μs)
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
900
800 RG = 10Ω
700
600 RG = 22Ω
500
400 RG = 47Ω
300
200 RG = 100Ω
100
0
0 20 40 60 80
IF (A)
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
10000
Cies
100
1000
Coes
100
Cres
10
0
20 40 60 80 100
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6 www.irf.com © 2013 International Rectifier
18 400
16 350
14 300
12 250
10 200
8 150
6 100
4 50
8 10 12 14 16 18
VGE (V)
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
16
14 VCES = 300V
12 VCES = 400V
10
8
6
4
2
0
0 25 50 75 100
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
March 15, 2013

6 Page



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部品番号部品説明メーカ
IRGP4063D-EPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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