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Datasheet EMA2203 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMA2203 | Stereo 2.4W Audio Power Amplifier ESMT/EMP
Volume Control and Headphone
GENERAL DESCRIPTION
The EMA2203 is a monolithic integrated circuit that provides DC volume control, and stereo bridged audio power amplifiers capable of producing 2W into 4Ω or 2.4W into 3Ω with less than 1.0% THD+N. 1.1W (typ) into 8Ω
EMA2203
Stereo 2.4W A |  Elite Semiconductor | amplifier |
| 2 | EMA2203-50QE20NRR | Stereo 2.4W Audio Power Amplifier ESMT/EMP
Volume Control and Headphone
GENERAL DESCRIPTION
The EMA2203 is a monolithic integrated circuit that provides DC volume control, and stereo bridged audio power amplifiers capable of producing 2W into 4Ω or 2.4W into 3Ω with less than 1.0% THD+N. 1.1W (typ) into 8Ω
EMA2203
Stereo 2.4W A | Elite Semiconductor | amplifier |
EMA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMA04N03A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other  Excelliance MOS transistor | | |
| 2 | EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 3 | EMA06N03CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
| 4 | EMA09N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 5 | EMA09N03CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
| 6 | EMA1001 | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | | |
| 7 | EMA1001-50MA08GRR | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | |
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