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Datasheet EMA1201 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMA1201 | 2W Stereo Audio Power Amplifier ESMT/EMP
General Description
The EMA1201 is a stereo bridged audio power amplifier capable of delivering 1.2W of continuous average power into a 8Ω load or 1.7W into 4Ω with less than 1% THD when powered by a 5V power supply. It does not require output coupling capacitors or bootstrap capacitors |  Elite Semiconductor | amplifier |
| 2 | EMA1201-50HB16GRR | 2W Stereo Audio Power Amplifier ESMT/EMP
General Description
The EMA1201 is a stereo bridged audio power amplifier capable of delivering 1.2W of continuous average power into a 8Ω load or 1.7W into 4Ω with less than 1% THD when powered by a 5V power supply. It does not require output coupling capacitors or bootstrap capacitors | Elite Semiconductor | amplifier |
EMA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMA04N03A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other  Excelliance MOS transistor | | |
| 2 | EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 3 | EMA06N03CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
| 4 | EMA09N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 5 | EMA09N03CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
| 6 | EMA1001 | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | | |
| 7 | EMA1001-50MA08GRR | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | |
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