DataSheet.jp

C5811 の電気的特性と機能

C5811のメーカーはSanyo Semicon Deviceです、この部品の機能は「NPN Transistor - 2SC5811」です。


製品の詳細 ( Datasheet PDF )

部品番号 C5811
部品説明 NPN Transistor - 2SC5811
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




このページの下部にプレビューとC5811ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

C5811 Datasheet, C5811 PDF,ピン配置, 機能
Ordering number : ENN7415
2SC5811
NPN Triple Diffused Planar Silicon Transistor
2SC5811
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage : VCBO=1600V.
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5811]
16.0 3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
2.8
2.0
0.7
12 3
5.45
5.45
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
ICES
IEBO
Conditions
VCB=800V, IE=0
VCE=1600V, RBE=0
VEB=4V, IC=0
min
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Ratings
1600
800
5
8
16
3.0
65
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
typ
max
Unit
10 µA
1.0 mA
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22503 TS IM TA-3850 No.7415-1/4

1 Page





C5811 pdf, ピン配列
2SC5811
SW Time -- IC
10
7
VCC=200V
IC / IB1=6
5 IB2 / IB1=3
3 tstg R load
2
10 SW Time -- IB2
7
VCC=200V
IC=3A
5 IB1=0.5A
R load
3 tstg
2
1.0
7
5
tf
3
2
0.1
0.1
2
3
2 ICP=16A
10 IC=8A
7
5
3
2
3 5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
PC =65W
5 7 10
IT03899
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
4.0
5 7 100
IT03901
3.5
3.0
2.5
2.0
1.5
No heat sink
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03903
1.0
7
5
3
2
0.1
2
3
3
2
10
7
5
3
2
5 7 1.0
23
Base Current, IB2 -- A
Reverse Bias A S O
57
IT03900
L=500µH
IB2= --2A
Tc=25°C
Single pulse
1.0
7
5
3
2
0.1
100
80
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE -- V IT03902
PC -- Tc
70
65
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03904
No.7415-3/4


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ C5811 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
C5811

NPN Transistor - 2SC5811

Sanyo Semicon Device
Sanyo Semicon Device
C5812

NPN Transistor - 2SC5812

Hitachi Semiconductor
Hitachi Semiconductor
C5819

NPN Transistor - 2SC5819

Toshiba Semiconductor
Toshiba Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap