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C5811のメーカーはSanyo Semicon Deviceです、この部品の機能は「NPN Transistor - 2SC5811」です。 |
部品番号 | C5811 |
| |
部品説明 | NPN Transistor - 2SC5811 | ||
メーカ | Sanyo Semicon Device | ||
ロゴ | |||
このページの下部にプレビューとC5811ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordering number : ENN7415
2SC5811
NPN Triple Diffused Planar Silicon Transistor
2SC5811
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage : VCBO=1600V.
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5811]
16.0 3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
2.8
2.0
0.7
12 3
5.45
5.45
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
ICES
IEBO
Conditions
VCB=800V, IE=0
VCE=1600V, RBE=0
VEB=4V, IC=0
min
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Ratings
1600
800
5
8
16
3.0
65
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
typ
max
Unit
10 µA
1.0 mA
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22503 TS IM TA-3850 No.7415-1/4
1 Page 2SC5811
SW Time -- IC
10
7
VCC=200V
IC / IB1=6
5 IB2 / IB1=3
3 tstg R load
2
10 SW Time -- IB2
7
VCC=200V
IC=3A
5 IB1=0.5A
R load
3 tstg
2
1.0
7
5
tf
3
2
0.1
0.1
2
3
2 ICP=16A
10 IC=8A
7
5
3
2
3 5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
PC =65W
5 7 10
IT03899
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
4.0
5 7 100
IT03901
3.5
3.0
2.5
2.0
1.5
No heat sink
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03903
1.0
7
5
3
2
0.1
2
3
3
2
10
7
5
3
2
5 7 1.0
23
Base Current, IB2 -- A
Reverse Bias A S O
57
IT03900
L=500µH
IB2= --2A
Tc=25°C
Single pulse
1.0
7
5
3
2
0.1
100
80
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE -- V IT03902
PC -- Tc
70
65
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03904
No.7415-3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ C5811 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
C5811 | NPN Transistor - 2SC5811 | Sanyo Semicon Device |
C5812 | NPN Transistor - 2SC5812 | Hitachi Semiconductor |
C5819 | NPN Transistor - 2SC5819 | Toshiba Semiconductor |