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Datasheet ELM7179-10F PDF ( 特性, スペック, ピン接続図 )

部品番号 ELM7179-10F
部品説明 C-Band Internally Matched FET
メーカ SUMITOMO
ロゴ SUMITOMO ロゴ 
プレビュー
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ELM7179-10F Datasheet, ELM7179-10F PDF,ピン配置, 機能
ELM7179-10F
C-band Internally Matched FET
FEATURES
High Output Power P1dB=40.5dBm(typ.)
High Gain G1dB=9.0dB(typ.)
High P.A.E. : ηadd=38%(typ.)
Broad Band 7.1 - 7.9GH
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The ELM7179-10F is a power GaAs FET that is
internally matched for standard communication bands
to provide optimum power and gain in a 50Ω system.
SEDI’s stringent Quality Assurance Program assures
the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Drain-Source Voltage
Gata-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TST G
TCH
Rating
15
-5
42.8
-65 to +175
+ 175
Unit
V
V
W
deg-C
deg-C
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
DC input Voltage
Forward Gate Current
Reverse Gate Current
Storage Temperature
Channel Temperature
VDS
IGF
IGR
TST G
TCH
Condition
RG=51Ω
RG=51Ω
Recommend
< 10
< +27.0
< -5.8
-55 to +125
+ 155
Unit
V
mA
mA
deg-C
deg-C
RECOMMENDED OPERATING CONDITIONS ( Case Temperature Tc=25 deg-C )
Item
Symbol
Test Conditions
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current at 1dB G.C.P.
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
dG
IM3
VDS=5V, VGS=0V
VDS=5V, IDS=2400mA
VDS=5V, IDS=240mA
IGS=-240uA
VDS=10V
IDS(DC)=2600mA(typ.)
Zs=Zl=50Ω
f=7.9GHz, df=10MHz, 2-Tone Test
Pout=29.0dBm ( S.C.L. )
Min.
-0.5
-5
7.1
39.5
8.0
-44
Limits
Typ.
4000
4000
-1.5
40.5
9.0
2600
38
-46
Max.
5600
-3.0
7.9
3000
1.2
Unit
mA
mS
V
V
GH
dBm
dB
mA
dB
dBc
Thermal Resistance
Channel Temperature Rise
Rth
dTch
Channel to Case
(VDS x Idsr - POUT + PIN) x Rth
3.0 3.5 deg-C/W
- - 100 deg-C
G.C.P. = Gain Compres sion Point
S.C.L. = Single Carrier Level
Note : RF-Test is measured with Vgs-Constant Circuit
ESD
class 3A
@JEDEC JESD22-A114C.01 (C=100pF, R=1500Ω)
CASE STYLE
IK
RoHS Compliance
Yes
Edition 1.0
Mar. 2010
1

1 Page



ELM7179-10F pdf, ピン配列
Output Power & P.A.E.
v.s. Input Power by Drain Voltage
IDS(DC)=2.6A@7.1GH
42
120
40 100
38 80
36 60
34 40
32 20
30 0
21 23 25 27 29 31 33 35
Input Power[dBm]
Vds=8V
Vds=9V
Vds=10V
ELM7179-10F
C-band Internally Matched FET
Output Power & P.A.E.
v.s. Input Power by Drain Voltage
IDS(DC)=2.6A@7.5GH
42
120
40 100
38 80
36 60
34 40
32 20
30 0
21 23 25 27 29 31 33 35
Input Power[dBm]
Vds=8V
Vds=9V
Vds=10V
Output Power & P.A.E.
v.s. Input Power by Drain Voltage
IDS(DC)=2.6A@7.9GH
42 120
40 100
38 80
36 60
34 40
32 20
30
21
23 25 27 29 31 33
Input Power[dBm]
0
35
Vds=8V
Vds=9V
Vds=10V
Edition 1.0
Mar. 2010
3


3Pages


ELM7179-10F 電子部品, 半導体
ELM7179-10F
C-band Internally Matched FET
IMD v.s. Output Power by Drain Voltage
IDS(DC)=2.6A@7.1GH
-20
-25
-30
-35 IM3
-40
-45
-50
-55 IM5
-60
24 26 28 30 32 34 36
Output Power(dBm) (S.C.L.)
Vds=8V
Vds=9V
Vds=10V
IMD v.s. Output Power by Drain Voltage
IDS(DC)=2.6A@7.5GH
-20
-25
-30
-35 IM3
-40
-45
-50
-55
-60
24
IM5
26 28 30 32 34 36
Output Power(dBm) (S.C.L.)
Vds=8V
Vds=9V
Vds=10V
IMD v.s. Output Power by Drain Voltage
IDS(DC)=2.6A@7.9GH
-20
-25
-30
-35 IM3
-40
-45
-50
-55
-60
24
IM5
26 28 30 32 34 36
Output Power(dBm) (S.C.L.)
Vds=8V
Vds=9V
Vds=10V
Edition 1.0
Mar. 2010
6

6 Page





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