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Datasheet ELM7179-7PS PDF ( 特性, スペック, ピン接続図 )

部品番号 ELM7179-7PS
部品説明 C-Band Internally Matched FET
メーカ SUMITOMO
ロゴ SUMITOMO ロゴ 
プレビュー
Total 16 pages
		
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ELM7179-7PS Datasheet, ELM7179-7PS PDF,ピン配置, 機能
ELM7179-7PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=39.0dBm (Typ.)
High Gain: G1dB=10.0dB (Typ.)
High PAE: ηadd=34% (Typ.)
Broad Band: 7.1~7.9GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM7179-7PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TSTG
TCH
15
-5
42.8
-40 to +125
175
Unit
V
V
W
deg-C
deg-C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
TCH
RG=100 ohm
RG=100 ohm
<10
<+16
>-2.2
155
Unit
V
mA
mA
deg-C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
Tch
Symbol Condition
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
G
IM3
Rth
Tch
VDS=5V, VGS=0V
VDS=5V, IDS=2200mA
VDS=5V, IDS=170mA
IGS=170uA
VDS=10V
IDS(DC)=2200mA(typ.)
f=7.1~7.9 GHz
f=7.9GHz
f=10MHz, 2-tone Test
Pout=28.0dBm (S.C.L)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
38.0
8.5
-
-
-
-40
-
-
Limit
Typ.
3400
3400
-1.5
Max.
5200
-
-3.0
--
39.0
10.0
2200
34
-
-
-
2600
-
1.2
-43 -
2.5 3.0
- 80
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
Deg-C/W
Deg-C
1

1 Page



ELM7179-7PS pdf, ピン配列
RF Characteristics
Power Derating Curve
50
40
30
20
10
0
0 50 100 150 200
Case Temperature []
Output Power vs. Frequency
VDS=10V, IDS(DC)=2200mA
42
40
38
36
34
32
30
28
6.9
7.1 7.3 7.5 7.7 7.9
Frequency [GHz]
8.1
21 dBm
29 dBm
23 dBm
31 dBm
25 dBm
P1dB
27 dBm
ELM7179-7PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power
Added Efficiency
VDS=10V, IDS(DC)=2200mA
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
19 21 23 25 27 29 31 33
Input Power [dBm]
7.1 GHz
7.5 GHz
7.9 GHz
IMD vs. Output Power
VDS=10V, IDS(DC) =2200mA
-30
-35
-40
IM3
-45
-50
-55
-60
IM5
-65
-70
19
21 23 25 27 29 31 33
Output Power [dBm] S.C.L.
7.1 GHz
7.5 GHz
7.9 GHz
3


3Pages


ELM7179-7PS 電子部品, 半導体
ELM7179-7PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2200mA @7.1GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
19 21 23 25 27 29 31 33
Input Power [dBm]
-40 degC
20 degC
80 degC
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2200mA @7.5GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
19 21 23 25 27 29 31 33
Input Power [dBm]
-40 degC
20 degC
80 degC
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2200mA @7.9GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
19 21 23 25 27 29 31 33
Input Power [dBm]
-40 degC
20 degC
80 degC
6

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