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Datasheet ELM7179-4PS PDF ( 特性, スペック, ピン接続図 )

部品番号 ELM7179-4PS
部品説明 C-Band Internally Matched FET
メーカ SUMITOMO
ロゴ SUMITOMO ロゴ 
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ELM7179-4PS Datasheet, ELM7179-4PS PDF,ピン配置, 機能
ELM7179-4PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=36.0dBm (Typ.)
High Gain: G1dB=10.5dB (Typ.)
High PAE: hadd=35% (Typ.)
Broad Band: 7.1 to 7.9GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM7179-4PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
27.3
Storage Temperature
TSTG
-40 to +125
Channel Temperature
TCH
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C)
Item
Symbol
Condition
DC Input Voltage
VDS
Forward Gate Current
IGF RG=100 ohm
Reverse Gate Current
IGR RG=100 ohm
Channel Temperature
TCH
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
DTch
Symbol
Condition
IDSS
gm
VP
VGSO
VDS=5V, VGS=0V
VDS=5V, IDS=1100mA
VDS=5V, IDS=85mA
IGS=85uA
P1dB
G1dB
Idsr
hadd
DG
IM3
Rth
DTch
VDS=10V
IDS(DC)=0.65IDSS(typ.)
f=7.1 to 7.9 GHz
f=7.9GHz
Df=10MHz, 2-tone Test
Pout=25.5dBm (S.C.L.)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
35.0
9.0
-
-
-
-40
-
-
Unit
V
V
W
deg.C
deg.C
Limit
<10
<+16
>-2.2
155
Unit
V
mA
mA
deg.C
Limit
Typ.
1700
1700
-1.5
-
36.0
10.5
1100
35
-
Max.
2600
-
-3.0
-
-
-
1300
-
1.2
-43 -
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
4.5 5.5 deg.C/W
- 71.5 deg.C
Edition 1.8a
Jul. 2010
1

1 Page



ELM7179-4PS pdf, ピン配列
RF Characteristics
Output Power vs. Frequency
38 VDS=10V, IDS(DC)=1100mA
36
34
32
30
28
26
6.9 7.1 7.3 7.5 7.7
Frequency [GHz]
18 dBm
24 dBm
P1dB
20 dBm
26 dBm
7.9 8.1
22 dBm
28 dBm
ELM7179-4PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency
38 VDS=10V, IDS(DC)=1100mA 60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
7.1 GHz
7.5 GHz
7.9 GHz
IMD vs. Output Power
-30 VDS=10V, IDS(DC)=1100mA
-35
-40
-45 IM3
-50
-55
-60 IM5
-65
-70
16
18 20 22 24 26 28 30
Output Power [dBm] S.C.L.
7.1 GHz
7.5 GHz
7.9 GHz
Edition 1.8a
Jul. 2010
3


3Pages


ELM7179-4PS 電子部品, 半導体
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @7.1GHz
ELM7179-4PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @7.5GHz
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @7.9GHz
Edition 1.8a
Jul. 2010
6

6 Page





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