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PDF K3484 Data sheet ( Hoja de datos )
| Número de pieza | K3484 | |
| Descripción | MOSFET ( Transistor ) - 2SK3484 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
• Low Ciss: Ciss = 900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3484
TO-251 (MP-3)
2SK3484-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
100
±20
±16
±22
30
1.0
150
–55 to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
4.17 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
Pulsed
ID = 8 A
200
VGS = 4.5 V
10 V
100
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
10
0.01
Crss
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Drain Current - A
2SK3484
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SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10 VGS = 10 V
1
0V
0.1
0.01
0
0.5 1
VSD - Source to Drain Voltage - V
1.5
1000
100
SWITCHING CHARACTERISTICS
VDD = 50 V
VGS = 10 V
RG = 0 Ω
tf
td(off)
10 td(on)
tr
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 10
80 VDD = 80 V
50 V
20 V
60
8
VGS
6
40 4
20 2
VDS
ID = 16 A
00
5 10 15 20 25
QG - Gate Charge - nC
Data Sheet D15069EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3484.PDF ] | |
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