PDF ISL70419SEH Data sheet ( Hoja de datos )

Número de pieza	ISL70419SEH
Descripción	Radiation Hardened 36V Quad Precision Low Power Operational Amplifier
Fabricantes	Intersil
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No Preview Available ! Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With Enhanced SET Performance ISL70419SEH The ISL70419SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current and low temperature drift making them the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls. The ISL70419SEH is offered in a 14 Ld hermetic ceramic flatpack package. The device is offered in an industry standard pin configuration and operates over the extended temperature range from -55°C to +125°C. Applications • Precision instrumentation • Spectral analysis equipment • Active filter blocks • Thermocouples and RTD reference buffers • Data acquisition • Power supply control Features • Electrically screened to DLA SMD# 5962-14226 • Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110µV, Max. • Superb offset temperature coefficient. . . . . . . 1µV/°C, Max. • Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max. • Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max. • Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA • Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz • Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V • Operating temperature range. . . . . . . . . . . .-55°C to +125°C • Radiation environment - SEL/SEB LETTH (VS = ±36V). . . . . . . . . 86.4 MeV•cm2/mg - SET recovery time . . . . . . . . . . < 10µs @ 60 MeV•cm2/mg - Total dose HDR (50-300rad(Si)/s) . . . . . . . . . . 300krad(Si) - Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) * * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. Related Literature AN1936, ISL70419SEHEV1Z Evaluation Board User’s Guide C1 8.2nF V+ - VIN R1 R2 1.84k 4.93k ISL70419SEH + 3.3nF C2 V- OUTPUT SALLEN-KEY LOW PASS FILTER (fC = 10kHz) FIGURE 1. TYPICAL APPLICATION 10 9 CH2 = VOUT - B 8 VS = ±15V 7 6 5 4 3 2 1 0 -8 -6 -4 -2 0 2 SET EXTREME DEVIATION(V) 4 FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60 MeV•cm2/mg June 24, 2014 FN8653.0 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 \| Copyright Intersil Americas LLC 2014. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. 1 page ISL70419SEH Electrical Specifications VS ± 15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER DESCRIPTION TEST CONDITIONS MIN MAX (Note 5) TYP (Note 5) UNITS VOL Output Voltage Low RL = 10k to ground -13.7 -13.5 -13.2 V V RL = 2k to ground -13.55 -13.3 -13.0 V V IS Supply Current/Amplifier 0.44 0.625 0.75 mA mA ISC Short-Circuit Current VSUPPLY Supply Voltage Range AC SPECIFICATIONS guaranteed by PSRR ± 2.25 43 ± 20 mA V GBWP enVp-p en en en en in Gain Bandwidth Product Voltage Noise VP-P Voltage Noise Density Voltage Noise Density Voltage Noise Density Voltage Noise Density Current Noise Density AV = 1k, RL = 2k 0.1Hz to 10Hz f = 10Hz f = 100Hz f = 1kHz f = 10kHz f = 1kHz 1.5 0.25 10 8.2 8 8 0.1 MHz µVP-P nV/Hz nV/Hz nV/Hz nV/Hz pA/Hz THD + N Total Harmonic Distortion TRANSIENT RESPONSE 1kHz, G = 1, VO = 3.5VRMS, RL = 2k 1kHz, G = 1, VO = 3.5VRMS, RL = 10k 0.0009 0.0005 % % SR Slew Rate, VOUT 20% to 80% AV = 11, RL = 2kVO = 4VP-P 0.3 0.5 0.2 V/µs V/µs tr, tf, Small Signal Rise Time 10% to 90% of VOUT AV = 1, VOUT = 50mVP-P, RL = 10kto VCM 130 450 625 ns ns Fall Time 90% to 10% of VOUT AV = 1, VOUT = 50mVP-P, RL = 10kto VCM 130 600 700 ns ns ts Settling Time to 0.1% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, RL = 5kto VCM Settling Time to 0.01% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, RL = 5kto VCM Settling Time to 0.1% 4V Step; 10% to VOUT AV = -1, VOUT = 4VP-P, RL = 5kto VCM Settling Time to 0.01% 4V Step; 10% to VOUT AV = -1, VOUT = 4VP-P, RL = 5kto VCM tOL Output Positive Overload Recovery Time AV = -100, VIN = 0.2VP-P, RL = 2kto VCM Output Negative Overload Recovery Time AV = -100, VIN = 0.2VP-P, RL = 2kto VCM OS+ Positive Overshoot AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2kto VCM 21 24 13 18 5.6 10.6 15 33 µs µs µs µs µs µs % % OS- Negative Overshoot AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2kto VCM 15 33 % % Submit Document Feedback 5 June 24, 2014 FN8653.0 5 Page ISL70419SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued) 14.1 14.0 13.9 VS = +15V RL = 2kΩ 13.8 13.7 13.6 13.5 13.4 13.3 13.2 13.1 -70 -50 -30 -10 10 30 50 70 TEMPERATURE (°C) 90 110 130 -13.1 -13.2 -13.3 VS = +15V RL = 2kΩ -13.4 -13.5 -13.6 -13.7 -13.8 -13.9 -14.0 -14.1 -14.2 -70 -50 -30 -10 10 30 50 70 TEMPERATURE (°C) 90 110 130 FIGURE 21. VOUT vs TEMPERATURE FIGURE 22. VOUT vs TEMPERATURE 250 200 150 100 50 0 -50 -100 -150 V+ = 36.4V -200 Rg = 10, Rf = 100k AV = 10,000 -250 0123456789 TIME (s) FIGURE 23. INPUT NOISE VOLTAGE 0.1Hz to 10Hz 10 100 VS = ±18.2V AV = 1 10 1 1 10 100 1k 10k 100k FREQUENCY (Hz) FIGURE 24. INPUT NOISE VOLTAGE SPECTRAL DENSITY 1 VS = ±18.2V AV = 1 0.11 10 100 1k 10k 100k FREQUENCY (Hz) FIGURE 25. INPUT NOISE CURRENT SPECTRAL DENSITY Submit Document Feedback 11 200 180 160 140 120 PHASE 100 80 60 40 20 GAIN 0 -20 -40 -60 RL = 10k CL = 10pF -80 SIMULATION -1000.1m 1m 10m 100m 1 10 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 26. OPEN-LOOP GAIN, PHASE vs FREQUENCY, RL = 10k CL = 10pF June 24, 2014 FN8653.0 11 Page

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