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PDF IRFBC40 Data sheet ( 特性 )

部品番号 IRFBC40
部品説明 N-Channel Power MOSFETs
メーカ Harris
ロゴ Harris ロゴ 

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IRFBC40 Datasheet, IRFBC40 PDF,ピン配置, 機能
Semiconductor
January 1998
Features
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2and 1.6
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFBC40
TO-220AB
IRFBC40
IRFBC42
TO-220AB
IRFBC42
NOTE: When ordering, include the entire part number.
IRFBC40,
IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17426.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2157.2

1 Page





IRFBC40 pdf, ピン配列
IRFBC40, IRFBC42
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Internal Drain Inductance
Internal Source Inductance
LD Measured From the Drain Modified MOSFET
Lead, 6mm (0.25in) From Symbol Showing the
Package to Center of Die Internal Devices
LS Measured From the
Source Lead, 6mm
Inductances
D
(0.25in) From Header to
LD
Source Bonding Pad
G
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN TYP MAX UNITS
- 4.5 - nH
- 7.5 - nH
- - 1.0 oC/W
- - 80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN TYP MAX UNITS
- - 6.2 A
- - 25 A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 8)
-
- 1.5
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
200 450 940
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
1.8 3.8 8.0
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A. (Figures 15, 16).
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4 IRFBC42
IRFBC40
2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5-3


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