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FDPF5N50UT の電気的特性と機能

FDPF5N50UTのメーカーはFairchild Semiconductorです、この部品の機能は「Ultra FRFET MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDPF5N50UT
部品説明 Ultra FRFET MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDPF5N50UT Datasheet, FDPF5N50UT PDF,ピン配置, 機能
FDPF5N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 4 A, 2 Ω
November 2013
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
FDPF5N50UT Rev. C2
1
S
FDPF5N50UT
500
±30
4*
2.4*
16*
216
4
8.5
20
28
0.22
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF5N50UT
4.5
62.5
Unit
oC/W
www.fairchildsemi.com

1 Page





FDPF5N50UT pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
1
6.0 V
5.5 V
0.1
0.02
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.6
2.2
VGS = 10V
VGS = 20V
1.8
1.4
0
*Note: TJ = 25oC
6 12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
1000
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
Ciss 2. f = 1MHz
400 Coss
200
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
10
150oC
25oC
1
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
150oC
10
25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 1.0 1.6 2.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 4A
0
0 4 8 12
Qg, Total Gate Charge [nC]
©2012 Fairchild Semiconductor Corporation
FDPF5N50UT Rev. C2
3
www.fairchildsemi.com


3Pages


FDPF5N50UT 電子部品, 半導体
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDPF5N50UT Rev. C2
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDPF5N50UT

Ultra FRFET MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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