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FQPF9N50CFのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。 |
部品番号 | FQPF9N50CF |
| |
部品説明 | 500V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQPF9N50CFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQPF9N50CF
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.85Ω @VGS = 10 V
• Low gate charge (typical 28 nC)
• Low Crss (typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
December 2005
FRFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GD S
TO-220F
FQPF Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FQPF9N50CF Rev. A
1
S
FQPF9N50CF
500
9*
5.4*
36*
± 30
360
9
4.4
4.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQPF9N50CF
2.86
62.5
Units
°C/W
°C/W
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
VGS = 10V
1.5
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
1.0
VGS = 20V
0.5
Note : TJ = 25
0 5 10 15 20 25
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1600
1200
800
400
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
10 VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
Note : ID = 9A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
FQPF9N50CF Rev. A
3
www.fairchildsemi.com
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQPF9N50CF Rev. A
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ FQPF9N50CF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FQPF9N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
FQPF9N50CF | 500V N-Channel MOSFET | Fairchild Semiconductor |