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APM2509NのメーカーはAnpec Electronics Coroprationです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | APM2509N |
| |
部品説明 | N-Channel Enhancement Mode MOSFET | ||
メーカ | Anpec Electronics Coropration | ||
ロゴ | |||
このページの下部にプレビューとAPM2509Nダウンロード(pdfファイル)リンクがあります。 Total 9 pages
APM2509N
N-Channel Enhancement Mode MOSFET
Features
• 25V/60A , RDS(ON)=8mΩ(typ.) @ VGS=10V
RDS(ON)=11mΩ(typ.) @ VGS=4.5V
• Super High Dense Advanced Cell Design for
Extremely Low RDS(ON)
• Reliable and Rugged
• TO-252 Package
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
12 3
G DS
Top View of TO-252
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM 2509N
APM2509N U :
Lead Free Code
H andling C ode
Tem p. Range
Package Code
APM2509N
XXXXX
Package Code
U : TO -252
O p erating Junction T em p. R ange
C : -55 to 150 ° C
H andling C ode
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead F ree D evice B lank : O riginal D evice
XXXXX - D ate C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
25
V
±20
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
60
A
110
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - Feb., 2004
1
www.anpec.com.tw
1 Page APM2509N
Typical Characteristics
Output Characteristics
100
VGS=4,5,6,7,8,9,10V
80
3.5V
60
40 3V
20
2.5V
2V
0
0 2 4 6 8 10
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.8
I
DS
=250µA
1.5
1.2
0.9
0.6
0.3
0.0
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
Transfer Characteristics
100
80
60
40
Tj=125oC
20
Tj=25oC
Tj=-55oC
0
01234
VGS-Gate-to-Source Voltage (V)
5
On-Resistance vs. Drain Current
0.020
0.016
0.012
0.008
V =4.5V
GS
V =10V
GS
0.004
0.000
0
20 40 60 80 100
ID-Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.4 - Feb., 2004
3
www.anpec.com.tw
3Pages APM2509N
Package Informaion
TO-252( Reference JEDEC Registration TO-252)
E
b2
L2
A
C1
b
e1
D
H
L1
L
C
A1
Dim
A
A1
b
b2
C
C1
D
E
e1
H
L
L1
L2
Millimeters
Min.
Max.
2.18
2.39
0.89
1.27
0.508
0.89
5.207
5.461
0.46
0.58
0.46
0.58
5.334
6.22
6.35
6.73
3.96
5.18
9.398
10.41
0.51
0.64
1.02
0.89
2.032
Copyright ANPEC Electronics Corp.
Rev. A.4 - Feb., 2004
6
Min.
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
Inches
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
0.040
0.080
www.anpec.com.tw
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ APM2509N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
APM2509N | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |
APM2509NF | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |
APM2509NU | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |
APM2509NUB | N-Channel Enhancement Mode MOSFET | Anpec Electronics Coropration |