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PDF ET830 Data sheet ( Hoja de datos )
| Número de pieza | ET830 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ESTEK | |
| Logotipo |  |
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5 Amps，500Volts
N-Channel MOSFET
■ Description
The ET830 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = 1.5Ω@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
ET830
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
5.0 5.0＊
3.0 3.0＊
20 20＊
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
7.6
305
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
Derate above 25℃
PD
76 40
0.6 0.32
Junction Temperature
Storage Temperature
＊
Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
1 BEIJING ESTEK ELECTRONICS CO.,LTD
1 page  
■ Typical Characteristics (Continued)
ET830
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
5 BEIJING ESTEK ELECTRONICS CO.,LTD
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ET830.PDF ] | |
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