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ET830 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 ET830
部品説明 N-Channel MOSFET
メーカ ESTEK
ロゴ ESTEK ロゴ 



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ET830 Datasheet, ET830 PDF,ピン配置, 機能
5 Amps500Volts
N-Channel MOSFET
Description
The ET830 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Features
RDS(ON) = 1.5Ω@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
Symbol
ET830
Absolute Maximum Ratings(Tc=25,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
Drain Currenet Continuous
Tc=25
Tc=100
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
±30
5.0 5.0
3.0 3.0
20 20
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
7.6
305
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25
Derate above 25
PD
76 40
0.6 0.32
Junction Temperature
Storage Temperature
Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
1 BEIJING ESTEK ELECTRONICS CO.,LTD

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N-Channel MOSFET

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