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MBM29LV800BA-90 の電気的特性と機能

MBM29LV800BA-90のメーカーはFujitsuです、この部品の機能は「8M (1M X 8/512K X 16) BIT FLASH MEMORY」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBM29LV800BA-90
部品説明 8M (1M X 8/512K X 16) BIT FLASH MEMORY
メーカ Fujitsu
ロゴ Fujitsu ロゴ 




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MBM29LV800BA-90 Datasheet, MBM29LV800BA-90 PDF,ピン配置, 機能
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20845-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29LV800TA-70/90/-12/MBM29LV800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
(Continued)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

1 Page





MBM29LV800BA-90 pdf, ピン配列
MBM29LV800TA-70/-90/-12/MBM29LV800BA-70/-90/-12
s GENERAL DESCRIPTION
The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K
words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.
12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed
in standard EPROM programmers.
The standard MBM29LV800TA/BA offer access times 70 ns and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV800TA/BA are pin and command set compatible with JEDEC standard E2PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV800TA/BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV800TA/BA are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29LV800TA/BA memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
3


3Pages


MBM29LV800BA-90 電子部品, 半導体
MBM29LV800TA-70/-90/-12/MBM29LV800BA-70/-90/-12
s CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
N.C.
N.C.
WE
RESET
N.C.
N.C.
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A1
A2
A3
A4
A5
A6
A7
A17
A18
RY/BY
N.C.
N.C.
RESET
WE
N.C.
N.C.
A8
A9
A10
A11
A12
A13
A14
A15
TSOP(I)
1
2
(Marking Side)
48
47
3 46
4 45
5 44
6 43
7 42
8 41
9 40
10 39
11 38
12 MBM29LV800TA/MBM29LV800BA 37
13 Standard Pinout 36
14 35
15 34
16 33
17 32
18 31
19 30
20 29
21 28
22 27
23 26
24 25
FPT-48P-M19
24 (Marking Side) 25
23 26
22 27
21 28
20 29
19 30
18 31
17 32
16 33
15 34
14 35
13 MBM29LV800TA/MBM29LV800BA 36
12 Reverse Pinout 37
11 38
10 39
9 40
8 41
7 42
6 43
5 44
4 45
3 46
2 47
1 48
FPT-48P-M20
A16
BYTE
VSS
DQ 15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE
A0
A0
CE
VSS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
VSS
BYTE
A16
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
SOP
(Top View)
1 44 RESET
2 43 WE
3 42 A8
4 41 A9
5 40 A10
6 39 A11
7 38 A12
8 37 A13
9 36 A14
10 35 A15
11 34 A16
12 33 BYTE
13 32 V SS
14 31 DQ 15/A-1
15 30 DQ 7
16 29 DQ 14
17 28 DQ 6
18 27 DQ 13
19 26 DQ5
20 25 DQ 12
21 24 DQ4
22 23 VCC
FPT-44P-M16
6

6 Page



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部品番号部品説明メーカ
MBM29LV800BA-90

8M (1M X 8/512K X 16) BIT FLASH MEMORY

Fujitsu
Fujitsu


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