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Am29LV200T-90RFEB の電気的特性と機能

Am29LV200T-90RFEBのメーカーはAdvanced Micro Devicesです、この部品の機能は「2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 Am29LV200T-90RFEB
部品説明 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
メーカ Advanced Micro Devices
ロゴ Advanced Micro Devices ロゴ 




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Am29LV200T-90RFEB Datasheet, Am29LV200T-90RFEB PDF,ピン配置, 機能
PRELIMINARY
Am29LV200
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast as
90 ns
s Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
s Package option
— 48-pin TSOP
— 44-pin SO
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
Publication# 20513 Rev: D Amendment/+1
Issue Date: March 1998

1 Page





Am29LV200T-90RFEB pdf, ピン配列
PRELIMINARY
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Regulated Voltage Range: VCC =3.0–3.6 V
Full Voltage Range: VCC = 2.7–3.6 V
Max access time, ns (tACC)
Max CE# access time, ns (tCE)
Max OE# access time, ns (tOE)
Note: See “AC Characteristics” for full specifications.
-90R
90
90
40
BLOCK DIAGRAM
RY/BY#
VCC
VSS
RESET#
Sector Switches
Erase Voltage
Generator
Am29LV200
-100
100
100
40
-120
120
120
50
-150
150
150
55
DQ0DQ15 (A-1)
Input/Output
Buffers
WE#
BYTE#
CE#
OE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
Data
STB Latch
VCC Detector
A0–A16
Timer
Y-Decoder
STB
X-Decoder
Y-Gating
Cell Matrix
20513D-1
3 Am29LV200


3Pages


Am29LV200T-90RFEB 電子部品, 半導体
PRELIMINARY
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Am29LV200 T -90R E C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
F = 48-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
B = Bottom Sector
DEVICE NUMBER/DESCRIPTION
Am29LV200
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Am29LV200T-90R,
Am29LV200B-90R
EC, EI, FC, FI, SC, SI
Am29LV200T-100,
Am29LV200B-100
Am29LV200T-120,
Am29LV200B-120
Am29LV200T-150,
Am29LV200B-150
EC, EI, EE,
FC, FI, FE,
SC, SI, SE
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29LV200
6

6 Page



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部品番号部品説明メーカ
Am29LV200T-90RFE

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices
Advanced Micro Devices
Am29LV200T-90RFEB

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices
Advanced Micro Devices


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