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Am29LV200BT-120FEのメーカーはAdvanced Micro Devicesです、この部品の機能は「2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory」です。 |
部品番号 | Am29LV200BT-120FE |
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部品説明 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory | ||
メーカ | Advanced Micro Devices | ||
ロゴ | |||
このページの下部にプレビューとAm29LV200BT-120FEダウンロード(pdfファイル)リンクがあります。 Total 46 pages
Am29LV200B
Data Sheet
The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alter-
nates.
The following document contains information on Spansion memory products. Although the document
is marked with the name of the company that originally developed the specification, Spansion will
continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro and
changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21521 Revision D Amendment 6 Issue Date October 10, 2006
www.DataSheet4U.com
1 Page DATA SHEET
Am29LV200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alternates.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■ Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29LV200 device
■ High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
55 ns
■ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1 million erase cycle guarantee per
sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
— 48-pin TSOP
— 44-pin SO
— 48-ball FBGA
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21521 Rev: D Amendment: 6
Issue Date: October 10, 2006
3Pages DATA SHEET
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Regulated Voltage Range: VCC = 3.0–3.6 V
Full Voltage Range: VCC = 2.7–3.6 V
Max access time, ns (tACC)
Max CE# access time, ns (tCE)
Max OE# access time, ns (tOE)
Note: See “AC Characteristics” for full specifications.
55R
55
55
30
BLOCK DIAGRAM
RY/BY#
VCC
VSS
RESET#
Sector Switches
Erase Voltage
Generator
Am29LV200B
70 90
70 90
70 90
30 35
120
120
120
50
DQ0–DQ15 (A-1)
Input/Output
Buffers
WE#
BYTE#
CE#
OE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
Data
STB Latch
VCC Detector
A0–A16
Timer
Y-Decoder
STB
X-Decoder
Y-Gating
Cell Matrix
4
Am29LV200B
21521D6 October 10, 2006
6 Page | |||
ページ | 合計 : 46 ページ | ||
|
PDF ダウンロード | [ Am29LV200BT-120FE データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
Am29LV200BT-120FC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory | Advanced Micro Devices |
Am29LV200BT-120FC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory | Advanced Micro Devices |
Am29LV200BT-120FC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory | Advanced Micro Devices |
Am29LV200BT-120FC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory | Advanced Micro Devices |