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6N40CのメーカーはFairchild Semiconductorです、この部品の機能は「FQP6N40C」です。 |
部品番号 | 6N40C |
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部品説明 | FQP6N40C | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと6N40Cダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQP6N40C
N-Channel QFET® MOSFET
400 V, 6.0 A, 1.0 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V,
ID = 3 A
• Low Gate Charge (Typ. 16 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
D
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQP6N40C
400
6
3.6
24
± 30
270
6
7.3
4.5
73
0.58
-55 to +150
300
Thermal Characteristics
+θ
+θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP6N40C
1.71
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
6?
6?
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
1
www.fairchildsemi.com
1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.5
3.0
VGS = 10V
2.5
2.0
1.5
VGS = 20V
1.0
※ Note : TJ = 25℃
0.5
0
5 10 15 20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
600 C
oss
400 ※ Note;
C
rss
1. VGS = 0 V
2. f = 1 MHz
200
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
4 68
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 80V
10
V = 200V
DS
8
VDS = 320V
6
4
2
※ Note : ID = 6A
0
0 5 10 15 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
3
www.fairchildsemi.com
3Pages DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP6N40C Rev. C1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 6N40C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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