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H40T120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H40T120
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 

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H40T120 Datasheet, H40T120 PDF,ピン配置, 機能
Soft Switching Series
IHW40T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Very soft, fast recovery anti-parallel EmConHE diode
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW40T120 1200V 40A
1.8V
150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Marking
H40T120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO247-3
Value
1200
75
40
105
105
31
19.8
47
78
200
160
±20
10
270
-40...+150
-55...+150
Unit
V
A
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 08

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