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PDF IRL7Y1905C Data sheet ( Hoja de datos )
| Número de pieza | IRL7Y1905C | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-94192D
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRL7Y1905C
BVDSS
50V
RDS(on)
0.11Ω
ID
10A
IRL7Y1905C
50V, N-CHANNEL
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
10
6.3
40
21.5
0.17
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
±10
37.5
10
2.15
2.2
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
10/03/08
1 page  
IRL7Y1905C
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1 0.10
P DM
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
1E-005
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak TJ = P DM x ZthJC + Tc
0.1 1 10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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