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PDF K4213 Data sheet ( Hoja de datos )
| Número de pieza | K4213 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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 1. - 25V, 64A, MOSFET, TO-252  Hay una vista previa y un enlace de descarga de K4213 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
• Low total gate charge
QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
• 4.5 V drive available
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4213-ZK-E1-AY Note
2SK4213-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
25
±20
±64
±192
45
1.0
150
−55 to +150
21
44
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19565EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
2008
1 page  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
4.5 V
0V
10
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4213
Data Sheet D19565EJ1V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K4213.PDF ] | |
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