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15P12 の電気的特性と機能

15P12のメーカーはFairchild Semiconductorです、この部品の機能は「FQP15P12」です。


製品の詳細 ( Datasheet PDF )

部品番号 15P12
部品説明 FQP15P12
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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15P12 Datasheet, 15P12 PDF,ピン配置, 機能
FQP15P12/FQPF15P12
120V P-Channel MOSFET
QFET®
General Description
These P -Channel enhanc ement m ode pow er f ield effect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2@VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
S
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
▶▲
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP15P12
FQPF15P12
-120
-15 -15 *
-10.6
-10.6 *
-60 -60 *
± 30
1157
-15
10
-5.0
100 41
0.67
0.27
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
http://www.Datasheet4U.com

1 Page





15P12 pdf, ピン配列
Typical Characteristics
102
Top :
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
101
-5.5 V
-5.0 V
Bottom : -4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.9
0.8
0.7
0.6
V = -10V
GS
0.5
0.4
0.3
V = -20V
GS
0.2
0.1 Note : TJ = 25
0.0
0
20 40 60
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
oss
Ciss
C
rss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
102
101
175oC
25oC
100
10-1
2
-55oC
Notes :
1. VDS = -40V
2. 250μ s PulseTest
468
-V , Gate-Source Voltage V[ ]
GS
10
Figure 2. Transfer Characteristics
101
17525
100
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = -30V
V = -60V
DS
8
V = -96V
DS
6
4
2
Note : ID =- 15A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, December 2003


3Pages


15P12 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS
10%
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS
=L--1--
2
L IAS2
BVDSS
--------------------
BVDSS -V DD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
15P12

FQP15P12

Fairchild Semiconductor
Fairchild Semiconductor


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