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K3140のメーカーはHitachi Semiconductorです、この部品の機能は「MOSFET ( Transistor ) - 2SK3140」です。 |
部品番号 | K3140 |
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部品説明 | MOSFET ( Transistor ) - 2SK3140 | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとK3140ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-767C (Z)
4th. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source
http://www.Datasheet4U.com
1 Page Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body–drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Min
60
—
—
1.0
—
—
45
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max
——
— ±0.1
— 10
—
6.0
8.0
75
7100
1000
280
125
25
25
60
250
540
320
1.0
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
80 —
2SK3140
Unit Test Conditions
V ID = 10 mA, VGS = 0
µA VGS = ±20 V, VDS = 0
µA VDS = 60 V, VGS = 0
V ID = 1 mA, VDS = 10 V Note 1
mΩ ID = 30 A, VGS = 10 V Note 1
mΩ ID = 30 A, VGS = 4 V Note 1
S ID = 30 A, VDS = 10 V Note 1
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
nc VDD = 25 V
nc VGS = 10 V
nc ID = 60 A
ns VGS = 10 V, ID = 30 A
ns RL = 1Ω
ns
ns
V IF = 60 A, VGS = 0
ns IF = 60 A, VGS = 0
diF/ dt = 50 A/ µs
3
3Pages 2SK3140
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
3000
1000
Coss
300 Crss
100
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 60 A
80 VGS
60
VDS
40
VDD = 50 V
25 V
10 V
20
16
12
8
20 VDD = 50 V
4
25 V
10 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
6
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ K3140 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
K3140 | MOSFET ( Transistor ) - 2SK3140 | Hitachi Semiconductor |
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K3148 | MOSFET ( Transistor ) - 2SK3148 | Hitachi Semiconductor |