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H30R90 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H30R90
部品説明 IHW30N90R
メーカ Infineon
ロゴ Infineon ロゴ 



Total 12 pages
		

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H30R90 Datasheet, H30R90 PDF,ピン配置, 機能
Soft Switching Series
IHW30N90R
q
Reverse Conducting IGBT with monolithic body diode
Features:
1.5V typical saturation voltage of IGBT
Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications for ZCS
C
G
E
PG-TO-247-3
Type
VCE I
IHW30N90R 900V
C
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
Maximum Ratings
Parameter Sy
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 900V, Tj 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking Packag
e
H30R90 PG-TO -247-3
mbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
P tot 454
T j -40...+
Tstg
-
Value
900
60
30
90
90
60
30
90
±20
±25
175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.2 Nov 08
http://www.Datasheet4U.com

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