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IXTA7N60PM の電気的特性と機能

IXTA7N60PMのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA7N60PM
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTA7N60PM Datasheet, IXTA7N60PM PDF,ピン配置, 機能
Preliminary Technical Information
PolarTM Power MOSFET
(Electrically Isolated Tab)
IXTA7N60PM
IXTP7N60PM
VDSS =
ID25 =
RDS(on)
600V
4A
1.1Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
600
600
V
V
± 30
± 40
V
V
4
14
7
400
10
41
- 55 ... +150
150
- 55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
300
260
1.13/10
2.5
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 100μA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 3.5A, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
±100 nA
5 μA
50 μA
1.1 Ω
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G DS
G = Gate
S = Source
Isolated Tab
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Avanlanche rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99950(06/08)
http://www.Datasheet4U.com

1 Page





IXTA7N60PM pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
7
VGS = 10V
6 7V
5
4
3 6V
2
1
5V
0
0 1 2345
VD S - Volts
678
Fig. 3. Output Characteristics
@ 125ºC
7
VGS = 10V
6 7V
5
6V
4
3
2
5V
1
0
0 2 4 6 8 10 12 14 16
VD S - Volts
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value
vs. ID
2.6
2.4 VGS = 10V
2.2
2.0
TJ = 125ºC
1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8
0 2 4 6 8 10 12 14
I D - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXTA7N60PM
IXTP7N60PM
Fig. 2. Extended Output Characteristics
@ 25ºC
14
12 VGS = 10V
10
7V
8
6
6V
4
2
5V
0
0 3 6 9 12 15 18 21 24 27
VD S - Volts
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value
vs. Junction Temperature
2.6
2.4
2.2 VGS = 10V
2.0
1.8
1.6 ID= 7A
1.4 ID = 3.5A
1.2
1.0
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Curre nt v s. Case
Te mpe rature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTA7N60P

PolarHV Power MOSFET

IXYS
IXYS
IXTA7N60PM

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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