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PDF APM4550J Data sheet ( Hoja de datos )
| Número de pieza | APM4550J | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Anpec | |
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APM4550J
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
Pin Description
• N-Channel
30V/8A,
RDS(ON) = 20mΩ (typ.) @ VGS = 10V
RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V
• P-Channel
-30V/-7A,
RDS(ON) = 40mΩ (typ.) @ VGS = -10V
RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Top View of DIP − 8
D1 D1
S2
G2
G1
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
N-Channel
D2 D2
P-Channel
Ordering and Marking Information
APM4550
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
J : DIP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
Lead Free Code
L : Lead Free Device
APM4550J :
APM4550
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - May, 2007
1
www.anpec.com.tw
http://www.Datasheet4U.com
1 page  
APM4550J
Typical Characteristics (Cont.)
N-Channel
30
27
Output Characteristics
V = 4.5,5,6,7,8,9,10V
GS
4V
24
21
18
15 3.5V
12
9
6 3V
3
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
50
45
40
35
V =4.5V
GS
30
25
V =10V
GS
20
15
10
5
0 5 10 15 20 25 30
ID - Drain Current (A)
Drain-Source On Resistance
50
I =8A
D
45
40
35
30
25
20
15
10
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250µΑ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - May, 2007
5
www.anpec.com.tw
5 Page 
APM4550J
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
TP tp
Critical Zone
Ramp-up
TL to TP
TL
Tsmax
tL
T s m in
ts
Preheat
Ramp-down
25 t 25 °C to Peak
Ti me
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25°C to Peak Temperature
Sn-Pb Eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
See table 1
10-30 seconds
6°C/second max.
6 minutes max.
Pb-Free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
See table 2
20-40 seconds
6°C/second max.
8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - May, 2007
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet APM4550J.PDF ] | |
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