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PDF IXGN82N120C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXGN82N120C3H1 | |
| Descripción | High-Speed PT IGBT | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 1200V
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Advance Technical Information
IXGN82N120C3H1
VCES
IC110
VCE(sat)
= 1200V
= 58A
≤£ 3.9V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
130 A
58 A
42 A
500 A
ICM = 164
VCE ≤ VCES
595
A
W
-55 ... +150
150
-55 ... +150
2500
3000
°C
°C
°C
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 1mA, VCE = VGE
ICES VCE = VCES, VGE = 0V, Note 1
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 82A, VGE = 15V, Note 2
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
50 μA
6 mA
±200 nA
3.3 3.9 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Switching Losses
z Square RBSOA
z High Current Capability
z Isolation Voltage 2500 V~
z Anti-Parallel Ultra Fast Diode
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z SMPS
z PFC Circuits
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100171(7/09)
http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXGN82N120C3H1.PDF ] | |
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