DataSheet.jp

IRLR024 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR024
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



Total 11 pages
		

No Preview Available !

IRLR024 Datasheet, IRLR024 PDF,ピン配置, 機能
www.vishay.com
IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 5.0 V
18
4.5
12
Single
0.10
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR024, SiHLR024)
• Straight Lead (IRLU024, SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
•R DS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Material categorizati on: For definitions of c ompliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combi nation of fas t swit ching,
ruggedized d evice design, low on-resistance and
cost-effectiveness.
The DPAK is d esigned for surface mount ing using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU , S iHLU series) i s for t hrough-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
-
IRLR024PbF
SiHLR024-E3
DPAK (TO-252)
SiHLR024TRL-GE3
-
-
DPAK (TO-252)
SiHLR024TR-GE3
IRLR024TRPbFa
SiHLR024T-E3a
IPAK (TO-251)
SiHLU024-GE3
IRLU024PbF
SiHLU024-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS
VGS ±
ID
IDM 56
EAS
PD
dV/dt 4
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
10
14
9.2
0.33
0.020
91
42
2.5
.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S13-0164-Rev. D, 04-Feb-13
1
Document Number: 91322
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com

1 Page





ページ 合計 : 11 ページ
PDF
ダウンロード
[ IRLR024.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRLR020

(IRLU020 / IRLU024) N-Channel Logic Level MOSFET

Samsung Electronics
Samsung Electronics
IRLR024

(IRLU/R024) Power MOSFET

International Rectifier
International Rectifier
IRLR024

(IRLU020 / IRLU024) N-Channel Logic Level MOSFET

Samsung Electronics
Samsung Electronics
IRLR024

Power MOSFET

Vishay
Vishay

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap