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Not recommended for new designs –
Please use 25AA080A/B or 25LC080A/B.
25AA080/25LC080/25C080
8K SPI Bus Serial EEPROM
Device Selection Table
Part
Number
25AA080
25LC080
25C080
VCC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max. Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp.
Ranges
I
I
I,E
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500 A typical
- Standby current: 500 nA typical
• 1024 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC (150 mil)
• Temperature ranges supported:
- Industrial (I):
-40C to +85C
- Automotive (E) (25C080): -40°C to +125°C
Description:
The Microchip Technology Inc. 25AA080/25LC080/
25C080 (25XX080*) are 8 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Package Types
PDIP/SOIC
CS 1
SO 2
WP 3
VSS 4
8 VCC
7 HOLD
6 SCK
5 SI
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
X
Dec
EEPROM
Array
Page Latches
SI
SO
CS
SCK
HOLD
WP
VCC
VSS
Y Decoder
Sense Amp.
R/W Control
1997-2012 Microchip Technology Inc.
DS21230E-page 1
25AA080/25LC080/25C080
3.6 Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows the
user to select one of four levels of protection for the
array by writing to the appropriate bits in the Status reg-
ister. The array is divided up into four segments. The
user has the ability to write-protect none, one, two, or
all four of the segments of the array. The partitioning is
controlled as shown in Table 3-2.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect (WP) pin and the Write-Protect Enable
(WPEN) bit in the Status register control the program-
mable hardware write-protect feature. Hardware write
protection is enabled when WP pin is low and the
WPEN bit is high. Hardware write protection is disabled
when either the WP pin is high or the WPEN bit is low.
When the chip is hardware write-protected, only writes
to nonvolatile bits in the Status register are disabled.
See Table 3-3 for a matrix of functionality on the WPEN
bit.
See Figure 3-5 for the WRSR timing sequence.
TABLE 3-2:
BP1
0
0
1
1
ARRAY PROTECTION
BP0
Array Addresses
Write-Protected
0 none
1 upper 1/4
(0300h - 03FFh)
0 upper 1/2
(0200h - 03FFh)
1 all
(0000h - 03FFh)
FIGURE 3-7:
WRITE STATUS REGISTER TIMING SEQUENCE
CS
SCK
SI
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
instruction
data to Status register
0 00 00 0 01 7 6 54 3 2 10
High-impedance
SO
1997-2012 Microchip Technology Inc.
DS21230E-page 11