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P3NK90ZのメーカーはSTMicroelectronicsです、この部品の機能は「STP3NK90Z」です。 |
部品番号 | P3NK90Z |
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部品説明 | STP3NK90Z | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとP3NK90Zダウンロード(pdfファイル)リンクがあります。 Total 13 pages
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
900 V
900 V
900 V
900 V
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
3A
3A
3A
3A
90 W
25 W
90 W
90 W
TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-220
3
1
DPAK
3
2
1
TO-220FP
IPAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP3NK90Z
P3NK90Z
STP3NK90ZFP
P3NK90ZFP
STD3NK90ZT4
D3NK90Z
STD3NK90Z-1
D3NK90Z
PACKAGE
TO-220
TO-220FP
DPAK
IPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13
http://www.Datasheet4U.com
1 Page STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID =1m A, VGS = 0
900
IDSS
Zero Gate Voltage
Drain Current (VGS =0 )
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS =0 )
VGS = ± 30 V
±10
VGS(th) Gate Threshold Voltage
VDS =V GS,I D =5 0 µA
3
3.75
4.5
RDS(on)
Static Drain-source On
Resistance
VGS =1 0 V,I D = 1.5 A
4.1 4.8
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS =1 5V , ID = 1.5 A
VDS =2 5V ,f= 1M Hz, VGS = 0
Min.
VGS =0V , VDS =0 Vt o 400V
Test Conditions
VDD =4 50V , ID = 1.5 A
RG = 4.7Ω VGS =1 0 V
(Resistive Load see, Figure 3)
VDD =7 20V, ID =3 A,
VGS =1 0V
Min.
Typ.
2.7
590
63
13
34
Typ.
18
7
22.7
4.2
12
Max.
Max.
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V, ID = 1.5 A
RG =4 .7Ω VGS =1 0 V
(Resistive Load see, Figure 3)
VDD = 450V, ID =3 A,
RG =4 .7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
45
18
14.5
15
16
Max.
Unit
V
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
3A
12 A
VSD (1) Forward On Voltage
ISD = 3 A, VGS =0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs
VDD =1 00V, Tj =1 50°C
(see test circuit, Figure 5)
510 ns
2.2 µC
8.7 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/13
3Pages STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/13
6 Page | |||
ページ | 合計 : 13 ページ | ||
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部品番号 | 部品説明 | メーカ |
P3NK90Z | STP3NK90Z | STMicroelectronics |
P3NK90Z | STP3NK90Z | STMicroelectronics |