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GP07N120 の電気的特性と機能

GP07N120のメーカーはInfineonです、この部品の機能は「SGP07N120」です。


製品の詳細 ( Datasheet PDF )

部品番号 GP07N120
部品説明 SGP07N120
メーカ Infineon
ロゴ Infineon ロゴ 




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GP07N120 Datasheet, GP07N120 PDF,ピン配置, 機能
SGP07
N120
Fast IGBT in NPT-technology
lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP07N120 1200
VCE
V
IC
8A
Eoff
0.7mJ
Tj M
150°C
arking Package
GP07N120 PG-TO-220-3-1
G
C
E
Maximum Ratings
Parameter S
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 8A, VCC = 50V, RGE = 25, start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ymbol
VCE
IC
ICpuls
-
V GE
EAS
tSC
Ptot
T j , T stg
-
Value
1200
16.5
7.9
27
27
±20
40
10
125 W
-55...+150
260
Unit
V
A
V
mJ
µs
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 07
http://www.Datasheet4U.com

1 Page





GP07N120 pdf, ピン配列
SGP07
N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Sy
mbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
T j =2 5 °C ,
VCC =8 00V , I C =8A ,
VGE =1 5V/ 0 V,
R G =4 7 ,
L
1)
σ
= 180
nH
,
C σ 1) =40 p F
Energy losses include
“tail” and diode
reverse recovery.
Value
min. ty p.
- 27
- 29
- 440
- 21
- 0.6
- 0.4
- 1.0
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Sy
mbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
I C =8A ,
VGE =1 5V/ 0 V,
R G =4 7 ,
L
1)
σ
= 180
nH
,
C σ 1) =40 p F
Energy losses include
“tail” and diode
reverse recovery.
Value
min. ty p.
- 30
- 26
- 490
- 30
- 1.0
- 0.7
- 1.7
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.3 Sep 07


3Pages


GP07N120 電子部品, 半導体
SGP07
N120
td(off)
100ns
tf
td(on)
tr
10ns
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 ,
dynamic test circuit in Fig.E )
100ns
td(off)
td(on)
tf
tr
10ns
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7,
dynamic test circuit in Fig.E )
000ns
td(off)
100ns
td(on)
tf
tr
10ns
0
20406080100
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
6V
5V
4V max.
3V typ.
2V min.
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Sep 07

6 Page



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部品番号部品説明メーカ
GP07N120

SGP07N120

Infineon
Infineon


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