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Datasheet ME08N20-G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ME08N20-G | N-Channel 200V (D-S) MOSFET ME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist an |  Matsuki | mosfet |
ME0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ME030-350 | Closed ends Header www.DataSheet4U.net
 DECA data | | |
| 2 | ME030-508 | Pluggable terminal blocks www.DataSheet4U.net
Steckbare Anschlussklemmen, Raster 5,08 mm Pluggable terminal blocks, pitch 5.08 mm Borniers de raccordement enfichables, pas 5,08 mm
ME 030-508 Stiftleiste, mit Seitenwänden, abgewinkelt
1. Temperaturbereich 2. Werkstoffe Kontaktträger Kontakt 3. Mechanische Daten Kontaktieru  Lumberg data | | |
| 3 | ME04N25 | N-Channel 250-V (D-S) MOSFET N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
GENERAL DESCRIPTION
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices ar Matsuki mosfet | | |
| 4 | ME04N25-G | N-Channel 250-V (D-S) MOSFET N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
GENERAL DESCRIPTION
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices ar Matsuki mosfet | | |
| 5 | ME06N10 | N-Channel 100-V (D-S) MOSFET N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes Matsuki mosfet | | |
| 6 | ME06N10-G | N-Channel 100-V (D-S) MOSFET N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Thes Matsuki mosfet | | |
| 7 | ME08N20 | N-Channel 200V (D-S) MOSFET ME08N20/ME08N20-G
N- Channel 200V (D-S) MOSFET
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist an Matsuki mosfet | |
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