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STB24NM60N の電気的特性と機能

STB24NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 STB24NM60N
部品説明 Power MOSFET ( Transistor )
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STB24NM60N Datasheet, STB24NM60N PDF,ピン配置, 機能
STB24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
D²PAK
Features
Order codes
STB24NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max.
< 0.19 Ω
ID
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices
are made using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to
the company’s strip layout to yield one of the
world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converter.
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB24NM60N
Marking
24NM60N
3
!-V
Package
D²PAK
Packaging
Tape and reel
February 2011
Doc ID 010008 Rev 1
1/15
www.st.com
15
http://www.Datasheet4U.com

1 Page





STB24NM60N pdf, ピン配列
STB24NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM (1)
PTOT
dv/dt(2)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area.
2. ISD 17 A, di/dt 400 A/µs, peak VDS V(BR)DSS, VDD = 80% V(BR)DSS
Value
± 30
17
11
68
125
15
-55 to 150
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-pcb (1) Thermal resistance junction-pcb max.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
1
30
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAS, VDD = 50 V)
Value
6
300
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 010008 Rev 1
3/15


3Pages


STB24NM60N 電子部品, 半導体
Electrical characteristics
STB24NM60N
2.1 Electrical
characteristics (curves)
Figure 2.
ID
(A)
Safe operating area
Figure 3. Thermal impedance
AM07976v1
10
1
0.1
0.1
Tj=150°C
Tc=25°C
Sinlge
pulse
1 10
10µs
100µs
1ms
10ms
100 VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID
(A) VGS = 10 V
AM07977v1
ID(A)
40 40
VGS = 7 V
VDS= 20 V
35
AM07978v2
30 30
VGS = 6 V
25
20 20
15
10 10
VGS = 5 V
5
0
0 5 10 15 20 25 VDS(V)
0
0 2 4 6 8 10 VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
VGS
(V)
12
VDS
10
VDD=480V
ID= 17A
8
6
4
2
0
0 10 20 30 40
AM07979v1
VGS 500
400
300
200
100
0
50 Qg(nC)
RDS(on)
(Ω)
0.176
0.174
0.172
0.170
0.168
0.166
0.164
0.162
0.160
0.158
0
VGS=10V
5 10
AM08534v1
15 ID(A)
6/15 Doc ID 010008 Rev 1

6 Page



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部品番号部品説明メーカ
STB24NM60N

Power MOSFET ( Transistor )

STMicroelectronics
STMicroelectronics


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