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Si7856ADP の電気的特性と機能

Si7856ADPのメーカーはVishay Siliconixです、この部品の機能は「N-Channel 30-V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 Si7856ADP
部品説明 N-Channel 30-V (D-S) MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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Si7856ADP Datasheet, Si7856ADP PDF,ピン配置, 機能
N-Channel 30-V (D-S) MOSFET
Si7856ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)I
0.0037 at VGS = 10 V
30
0.0048 at VGS = 4.5 V
D (A)
25
23
Qg (Typ.)
39
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7856ADP-T1
Si7856ADP-T1-E3 (Lead (Pb)-free)
Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free available
• TrenchFET® Power MOSFET
Available
• Optimized for “Low Side” Synchronous
RoHS*
Rectifier Operation
COMPLIANT
• New Low Thermal Resistance PowerPAK® Package with
Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
25
20
15
12
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
4.5 1.6
5.4 1.9
3.4 1.2
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Sym
bol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
18
50
23
65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
www.vishay.com
1
http://www.Datasheet4U.com

1 Page





Si7856ADP pdf, ピン配列
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0075
8000
Si7856ADP
Vishay Siliconix
0.0060
0.0045
0.0030
VGS = 4.5 V
VGS = 10 V
6400
4800
3200
Ciss
0.0015
0.0000
0
102 03 04 05
ID - Drain Current (A)
On-Resistance vs. Drain Current
6
5
VDS = 15 V
ID = 25 A
4
0
3
2
1
0
0
50
10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
60
1600
Crss
Coss
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 20 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.025
TJ = 150 °C
10
TJ = 25 °C
0.020
0.015
0.010
0.005
ID = 25 A
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
www.vishay.com
3


3Pages


Si7856ADP 電子部品, 半導体
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
W
1
2
3
4
θ
2
E1
E
L1
θ
Z
A1
Detail Z
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
DIM.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
A1 - 0.05
b
0.33
0.41
0.51
c
0.23
0.28
0.33
D
5.05
5.15
5.26
D1
4.80
4.90
5.00
D2
3.56
3.76
3.91
D3
1.32
1.50
1.68
D4 0.57 typ.
D5 3.98 typ.
E
6.05
6.15
6.25
E1
5.79
5.89
5.99
E2 (for AL product)
E2 (for other product)
E3
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
3.30
3.48
3.68
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
3.66
3.84
3.91
K (for other product)
K1
H
L
L1
W
0.56
0.51
0.51
0.06
0.15
1.27 typ.
-
0.61
0.61
0.13
-
0.25
-
0.71
0.71
0.20
12°
0.36
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
0.125 typ.
Revison: 20-May-13
1
H
E2
L
K
E4
1
2
D
3
4
E3
Backside View of Single Pad
H
E2
K
E4
L
1
D1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.238
0.228
0.130
0.137
0.145
0.022
0.020
0.020
0.002
0.006
INCHES
NOM.
0.041
-
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
0.024
0.024
0.005
-
0.010
0.005 typ.
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
0.246
0.236
0.144
0.151
0.154
-
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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部品番号部品説明メーカ
Si7856ADP

N-Channel 30-V (D-S) MOSFET

Vishay Siliconix
Vishay Siliconix


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