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IXYB82N120C3H1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXYB82N120C3H1
部品説明 High-Speed IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXYB82N120C3H1 Datasheet, IXYB82N120C3H1 PDF,ピン配置, 機能
1200V XPT TM IGBT
GenX3TM w/ Diode
IXYB82N120C3H1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C (Chip Capability)
Lead Current Limit
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
164
160
82
42
320
41
800
ICM = 164
@VCE VCES
1040
-55 ... +150
150
-55 ... +150
A
A
A
A
A
A
mJ
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force
30..120 / 6.7..27
N/lb.
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 82A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
50 μA
3 mA
±100 nA
2.75
3.50
3.20 V
V
VCES =
IC110 =
V CE(sat)
tfi(typ) =
1200V
82A
3.2V
93ns
PLUS264TM
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Anti-Parallel Ultra Fast Diode
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100355E(6/13)
http://www.Datasheet4U.com

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IXYB82N120C3H1

High-Speed IGBT

IXYS Corporation
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