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IXTP52P10P の電気的特性と機能

IXTP52P10PのメーカーはIXYS Corporationです、この部品の機能は「P-Channel Enhancement Mode Avalanche Rated」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP52P10P
部品説明 P-Channel Enhancement Mode Avalanche Rated
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTP52P10P Datasheet, IXTP52P10P PDF,ピン配置, 機能
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
VDSS =
ID25 =
RDS(on)
- 100V
- 52A
50mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D (TAB)
Test Conditions
G
DS
D (TAB)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
-100
-100
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
- 52
-130
- 52
1.5
A
A
A
J
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
-10 μA
-150 μA
50 mΩ
G DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
http://www.Datasheet4U.com

1 Page





IXTP52P10P pdf, ピン配列
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
© 2008 IXYS CORPORATION, All rights reserved


3Pages


IXTP52P10P 電子部品, 半導体
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_52P10P(B5)3-25-08-B

6 Page



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部品番号部品説明メーカ
IXTP52P10P

P-Channel Enhancement Mode Avalanche Rated

IXYS Corporation
IXYS Corporation


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