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IXTP3N60P の電気的特性と機能

IXTP3N60PのメーカーはIXYS Corporationです、この部品の機能は「N-Channel Enhancement Mode Avalanche Rated」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP3N60P
部品説明 N-Channel Enhancement Mode Avalanche Rated
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTP3N60P Datasheet, IXTP3N60P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
VDSS = 600
ID25 = 3.0
RDS(on) 2.9
V
A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/ µs, V DD VDSS
TJ 150° C, RG = 30
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
Maximum Ratings
600 V
600 V
TO-263 (IXTA)
± 30
± 40
3.0
6
3
10
100
VG
VS
A
A TO-220 (IXTP)
A
mJ
mJ
(TAB)
5
70
-55 ... +150
150
-55 ... +150
300
260
4
3
0.35
V/ns
W
°C
°C
°C
°C
°C
g
g
g
GDS
TO-252 (IXTY)
G
S
G = Gate
S = Source
(TAB)
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 50 µA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
± 100 nA
5 µA
50 µA
2.9
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99449E(04/06)
http://www.Datasheet4U.com

1 Page





IXTP3N60P pdf, ピン配列
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
01
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
23 456
78
VD S - Volts
9 10
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 101 2 141 6 182 0
VD S - Volts
Fig. 5. RDS(on) No rm alized t o
0.5 ID25 Value vs. ID
3
2.8 VGS = 10V
2.6
TJ = 125º C
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25º C
1
0.8
01
2 34
I D - Amperes
56
© 2006 IXYS All rights reserved
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 2. Extended Output Characteristics
@ 25ºC
6
5.5 VGS = 10V
5 8V
4.5
4 7V
3.5
3
2.5
2
1.5 6V
1
0.5
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
1.6 ID = 3A
1.3 ID = 1. 5A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Te m pe rature
3.3
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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共有リンク

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部品番号部品説明メーカ
IXTP3N60P

Power MOSFET ( Transistor )

IXYS
IXYS
IXTP3N60P

N-Channel Enhancement Mode Avalanche Rated

IXYS Corporation
IXYS Corporation


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