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IRLR2908PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR2908PbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR2908PbF Datasheet, IRLR2908PbF PDF,ピン配置, 機能
PD - 95552A
AUTOMOTIVE MOSFET
IRLR2908PbF
IRLU2908PbF
Features
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
D
VDSS = 80V
RDS(on) = 28m
S ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
D-Pak
IRLR2908
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Maximum Power Dissipation
Max.
39
28
30
150
120
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
™Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
Thermal Resistance
300 (1.6mm from case )
Parameter
Typ.
Max.
RθJC
RθJA
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
––– 1.3
––– 40
––– 110
I-Pak
IRLU2908
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04
http://www.Datasheet4U.com

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