DataSheet.jp

F6N60 の電気的特性と機能

F6N60のメーカーはSuntacです、この部品の機能は「IRF6N60」です。


製品の詳細 ( Datasheet PDF )

部品番号 F6N60
部品説明 IRF6N60
メーカ Suntac
ロゴ Suntac ロゴ 




このページの下部にプレビューとF6N60ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

F6N60 Datasheet, F6N60 PDF,ピン配置, 機能
!
GENERAL DESCRIPTION
FEATURES
IRF6N60
POWER MOSFET
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
‹
‹
‹
‹
‹
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
Page 1
http://www.Datasheet4U.com

1 Page





F6N60 pdf, ピン配列
IRF6N60
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125к)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1ȍ) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS 600
Min
IRF6N60
Typ
Max
IDSS
IGSSF
100
50
100
IGSSR
100
VGS(th) 2.
0
4.0
RDS(on)
gFS 3.
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
4
1498
158
29
14
19
40
26
35.5
8.1
14. 1
4.5
1.2
2100
220
60
30
40
80
55
50
LS 7.5
Units
V
ӴA
nA
nA
V
ȍ
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
0.83
1.2
V
ton ** ns
trr 266 ns
Page 3


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ F6N60 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
F6N60

IRF6N60

Suntac
Suntac


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap