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PDF FDB9403_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB9403_F085 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDB9403_F085
N-Channel Power Trench® MOSFET
40V, 110A, 1.2mΩ
Features
Typ rDS(on) = 1mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
D
GS
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC2
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Aug
2012
D
G
S
Ratings
40
±20
110
See Figure4
968
333
.22
-55 to + 175
0.45
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDB9403
FDB9403_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1. Current is limited by bondwire configuration. Please see Fairchild AN 9757-1 for details on test method.
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©2012 Fairchild Semiconductor Corporation
FDB9403_F085_F085 Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Typical Characteristics
10
ID = 80A
8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
6
4
TJ = 175oC
2
0 TJ = 25oC
24 6 8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
1.2
VGS = VDS
ID = 2 50μA
1.0
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized Rdson vs Junction
Temperature
1.2
ID = 1mA
1.1
0.8 1.0
0.6 0.9
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
0.8
- 80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100000
10000
1000
Ciss
Coss
f= 1MHz
VGS = 0V
Crss
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
6
VDD = 16V
VDD = 20V
VDD = 24V
4
2
0
0 50 100 150 200
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDB9403_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDB9403_F085.PDF ] | |
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