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PDF 4N60Z Data sheet ( Hoja de datos )
| Número de pieza | 4N60Z | |
| Descripción | 40A 600V N-CHANNEL POWER MOSFET | |
| Fabricantes | UNISONIC TECHNOLOGIES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4N60Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
4N60Z
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The U TC 4N60Z is a hi gh voltage po wer MOSF ET and is
designed to have better ch aracteristics, such as fast sw itching
time, lo w gate charg e, lo w on-state res istance and h ave a high
rugged av alanche ch aracteristics. This po wer MOSF ET is usua lly
used at high speed switching applications in power supplies, PWM
motor controls , high effici ent DC to DC c onverters and bridg e
circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1
Power MOSFET
TO-220F
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60ZL-TF3-T
4N60ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-777.b
http://www.Datasheet4U.com
1 page  
4N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-777.B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 4N60Z.PDF ] | |
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