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PDF IRF9640 Data sheet ( Hoja de datos )
| Número de pieza | IRF9640 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Power MOSFET
IRF9640, SiHF9640
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 200
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
44
Qgs (nC)
7.1
Qgd (nC)
27
Configuration
Single
0.50
S
TO-220AB
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
•F ast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device des ign, low on -resistance a nd
cost-effectiveness.
The TO-220AB package is univers ally preferred for all
commercial-industrial app lications at powe r dissipation
levels to approximately 50 W. The low thermal resistance
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9640PbF
SiHF9640-E3
IRF9640
SiHF9640
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS ±
Continuous Drain Current
Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM -
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt -
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
- 200
20
- 11
- 6.8
44
1.0
700
- 11
13
125
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91086
S11-0513-Rev. B, 21-Mar-11
www
.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
1 page  
12
10
8
6
4
2
0
25
91086_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9640, SiHF9640
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VDS
10 %
td(on) tr
td(off) tf
90 %
VGS
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
10-2
10-5
91086_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91086
S11-0513-Rev. B, 21-Mar-11
www
.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF9640.PDF ] | |
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