DataSheet.jp

19N10V の電気的特性と機能

19N10VのメーカーはUNISONIC TECHNOLOGIESです、この部品の機能は「100V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 19N10V
部品説明 100V N-Channel MOSFET
メーカ UNISONIC TECHNOLOGIES
ロゴ UNISONIC TECHNOLOGIES ロゴ 




このページの下部にプレビューと19N10Vダウンロード(pdfファイル)リンクがあります。
Total 6 pages

No Preview Available !

19N10V Datasheet, 19N10V PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
19N10V
100V N-Channel MOSFET
„ DESCRIPTION
The U TC 100V N-Chan nel enhancement mode po wer fiel d
effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe,
DMOS techno logy which has bee n tail ored esp ecially in the
avalanche an d commutation mode to min imize on-state re sistance,
provide sup erior s witching p erformance, and withstand h igh en ergy
pulse. T hey are suited for l ow voltage ap plications s uch as aud io
amplifier, high efficiency switching DC/DC converters, and DC motor
control.
„ FEATURES
* RDS(ON) = 0.1@VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
19N10VL-TM3-T
19N10VG-TM3-T
19N10VL-TN3-R
19N10VG-TN3-R
Package
TO-251
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-914, A
http://www.Datasheet4U.com

1 Page





19N10V pdf, ピン配列
19N10V
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=80V, ID=19A, VGS=10V
(Note 1, 2)
VDD=50V, ID=19A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD VGS=0V, IS=15.6A
Maximum Body-Diode Continuous Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Body Diode Reverse Recovery Time
tRR VGS= 0V, IS=19A,
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/μs (Note 1)
Note: 1. Pulse Test : Pulse width 300µs, Duty cycle2%
Note: 2. Essentially independent of operating temperature
MIN TYP MAX UNIT
19
3.9
9.0
7.5
150
20
65
25
25
310
50
140
nC
ns
ns
ns
ns
1.5 V
15.6 A
62.4 A
78 ns
200 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-914, A


3Pages


19N10V 電子部品, 半導体
19N10V
„ TYPICAL CHARACTERISTICS
Power MOSFET
UTC as sumes no responsibility f or e quipment failures that r esult f rom using p roducts at values t hat
exceed, even momentarily, r ated values (such as maximum r atings, op erating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UT C products are not des igned for us e i n l ife support appl iances, dev ices or systems w here
malfunction of these products can be r easonably expected to result in personal injury. Reproduction in
whole or in part i s prohibited without the prior written consent of the copyright owner. T he information
presented in this document does not form part of any quotation or contract, is believed to be ac curate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-914, A

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ 19N10V データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
19N10

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
19N10V

100V N-Channel MOSFET

UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap