DataSheet.jp

11N80 の電気的特性と機能

11N80のメーカーはUNISONIC TECHNOLOGIESです、この部品の機能は「11A 812V N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 11N80
部品説明 11A 812V N-CHANNEL POWER MOSFET
メーカ UNISONIC TECHNOLOGIES
ロゴ UNISONIC TECHNOLOGIES ロゴ 




このページの下部にプレビューと11N80ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

11N80 Datasheet, 11N80 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
11N80
Preliminary
11A, 812V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 11N80 is an N-C hannel power MOSFET, it uses UTC’s
advanced technology to pr ovide customers with a mi nimum on-state
resistance, low gate charge and high switching speed.
The UTC 11N8 0 is su itable for high speed switching applications
in po wer supp lies, PW M mo tor controls, high efficient D C to DC
converters and bridge circuits.
FEATURES
* RDS(ON) <0.9@VGS=10V
* Low gate charge ( typical 60 nC)
* High switching speed
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N80L-T3P-T
11N80G-T3P-T
11N80L-TC3-T
11N80G-TC3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-3P
TO-230
1
1
Pin Assignment
123
GDS
GDS
TO-3P
TO-230
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE MARKING
TO-3P
TO-230
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-893.b
http://www.Datasheet4U.com

1 Page





11N80 pdf, ピン配列
11N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS ID=250µA, VGS=0V 800
BVDSS/TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse V
IDSS
IGSS
VDS=800V, VGS=0V
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA 3
VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDD=640V, ID=11A,
RG=25
VDD=400V, ID=11A, RG=25,
VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=11.0A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
VGS=0V, IS=11A, dIF/dt=100A/µS
MIN TYP MAX UNIT
V
1.0 V/°C
10 µA
+100 nA
-100 nA
5V
0.9
253 0 3290 pF
215 280 pF
23 30 pF
60 80
13
25
60 130
130 270
130 270
85 180
nC
nC
nC
ns
ns
ns
ns
100 0
170
11
44
1.4
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-893.b


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ 11N80 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
11N80

11A 812V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
11N80C3

SPP11N80C3

Infineon
Infineon


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap