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FTA10N40のメーカーはARKです、この部品の機能は「400V N-Channel MOSFET」です。 |
部品番号 | FTA10N40 |
| |
部品説明 | 400V N-Channel MOSFET | ||
メーカ | ARK | ||
ロゴ | |||
このページの下部にプレビューとFTA10N40ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
400V N-Channel MOSFET
General Features
¾ Low ON Resistance
¾ Low Gate Charge (typical 34nC)
¾ Fast Switching
¾ 100% Avalanche Tested
¾ RoHS Compliant/Lead Free
FTP10N40/FTA10N40
BVDSS
400V
RDS(ON) (Max.)
0.50Ω
ID
10A
Applications
¾ High Efficiency SMPS
¾ Adaptor/Charger
¾ LCD Panel Power
¾ Switching application
Ordering Information
Part Number Package
FTP10N40
TO-220
FTA10N40
TO-220F
Marking
FTP10N40
FTA10N40
Absolute Maximum Ratings
T C=25℃ unless otherwise specified
Symbol Para
meter
VDSS
ID
ID@100℃
IDM
PD
Drain-to-Source Voltage[1]
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@10V[2] Figure
Power Dissipation
Derating Factor above 25℃
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=7.2mH, ID=10A
Peak Diode Recovery dv/dt[3]
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
FTP10N40
FTA10N40
400
10 10*
Figure 3
6
125 31
1.0 0.25
±30
360 m
4.5
300
-55 to 150
Unit
V
A
W
W/℃
V
J
V/ns
℃
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FTP06N40
1.0
65 65
FTA06N40
4.0
Unit
℃/W
ARK Microelectronics Co., Ltd.
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Rev. 2.0 Mar. 2009
http://www.Datasheet4U.com
1 Page Source-Drain Diode Characteristics
Symbol Parameter
ISD
Continuous Source Current (Body
Diode)
ISM
Maximum Pulsed Current(Body
Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
FTP10N40/FTA10N40
Min
-- --
-- --
--
--
--
Typ.
--
247
1540
Max.
10
40
1.2
--
--
TC=25℃ unless otherwise specified
Units
Test Conditions
A Integral P-N diode in
A MOSFET
V IS=10A, VGS=0V
ns VGS=0V
nC IF=10A,di/dt=100A/µs
NOTE:
[1] TJ=+25℃ to +150℃
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] ISD=10A, di/dt≤100A/µs, VDD≤BVDSS, TJ=+150℃
[4] Pulse width≤380µs; duty cycle≤2%.
ARK Microelectronics Co., Ltd.
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Rev. 2.0 Mar. 2009
3Pages Figure 11.Typical Breakdown Voltage vs. Junction
Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
-75
-50 -25 0 25 50 75 100
TJ, Junction Temperature (℃)
125 150
FTP10N40/FTA10N40
Figure 12.Typical Threshold Voltage vs. Junction
Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (℃)
Figure 13. Maximum Forward Safe Operation Area
100
10us
100us
10
1ms
1 Operating in this area
may be limited by
RDS(ON)
10ms
DC
0.1
10
100
VDS, Drain-to-Source Voltage(V)
1000
Figure 14. Typical Capacitance vs. Drain-to-Source
10000
Voltage
1000
CISS
100 COSS
10 CRSS
1
0.01
0.1 1 10 100
VDS, Drain Voltage(V)
1000
Figure 15. Typical Gate Charge vs. Gate-to-Source
12 Voltage
10
8
6
4
2
0
0 5 10 15 20 25 30 35
QG, Gate Charge(nC)
40
35
30
25
20
15
10
5
0
0.25
Figure 16. Typical Body Diode Transfer
Characteristics
150℃
25℃
-55℃
0.5 0.75 1 1.25
VSD, Source-to-Drain Voltage(V)
1.5
ARK Microelectronics Co., Ltd.
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Rev. 2.0 Mar. 2009
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
FTA10N40 | 400V N-Channel MOSFET | ARK |