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IRLR3636PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR3636PBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR3636PBF Datasheet, IRLR3636PBF PDF,ピン配置, 機能
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
PD - 96224
IRLR3636PbF
IRLU3636PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
5.4m:
c6.8m:
99A
S ID (Package Limited)
50A
D
GD
Gate
S
G
S
D
G
D-Pak
I-Pak
IRLR3636PbF IRLU3636PbF
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
RθJC
RθJA
Symbol
Parameter
kJunction-to-Case
jJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
www.irf.com
Max.
99 c
70 c
50
396
143
0.95
±16
22
-55 to + 175
300 (1.6mm from case)
170
See Fig.14, 15, 22a, 22b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 http://www.Datasheet4U.com
02/06/09

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