(PDF) 3DD3853 Datasheet - NPN Transistor

Número de pieza	3DD3853
Descripción	NPN Transistor
Fabricantes	Koo Chin
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No Preview Available ! 3DD3853 TRANSISTOR (NPN) TO-220F FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature Value 60 60 7 3 150 -55-150 Units V V V A ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 Emitter cut-off current IEBO VEB=7V, IC=0 DC current gain hFE * VCE=5V, IC=500mA Collector-emitter saturation voltage VCE(sat) * IC=3A, IB=300mA Transition frequency *Pulse test: tp≤300µS, δ≤0.02. CLASSIFICATION OF hFE Rank fT VCE=5V, IC=500mA OY Range 60-120 100-200 MIN TYP MAX UNIT 60 V 60 V 7V 100 µA 100 µA 60 300 1.0 V 5 MHz GR 150-300 1 page

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PDF 3DD3853 Data sheet ( Hoja de datos )