IXTK600N04T2 Datasheet PDF - IXYS
| Part Number | IXTK600N04T2 | |
| Description | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode | |
| Manufacturers | IXYS | |
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Advance Technical Information
TrenchT2TM GigaMOSTM
Power MOSFET
IXTK600N04T2
IXTX600N04T2
VDSS =
ID25 =
RDS(on) ≤
40V
600A
1.5mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
40
40
V
V
± 20 V
600
160
1600
A
A
A
200 A
3J
1250
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
40 V
1.5 3.5 V
± 200 nA
10 µA
1 mA
1.5 mΩ
G
DS
PLUS247 (IXTX)
Tab
G
DS
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters and Off-Line UPS
z Primary-Side Switch
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100209(11/09)
http://www.Datasheet4U.com
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Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
90
80 RG = 1Ω , VGS = 10V
VDS = 20V
70
60
50 I D = 200A
40
30 I D = 100A
20
10
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
600
t r td(on) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 20V
400
I D = 200A
300
200 I D = 100A
140
120
100
80
60
100 40
0
1 2 3 4 5 6 7 89
RG - Ohms
20
10
400
350
300
250
200
150
100
50
0
40
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
t f td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 20V
200
180
160
140
TJ = 125ºC, 25ºC
120
100
80
60
40
60 80 100 120 140 160 180 200
ID - Amperes
IXTK600N04T2
IXTX600N04T2
100
90
80
70
60
50
40
30
20
10
0
40
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
RG = 1Ω , VGS = 10V
VDS = 20V
TJ = 125ºC
TJ = 25ºC
60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
400
350 t f
td(off) - - - -
RG = 1Ω, VGS = 10V
300 VDS = 20V
160
150
140
250 130
200
150 I D = 100A
I D = 200A
120
110
100 100
50 90
0 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
800
700 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
600 VDS = 20V
I D = 200A, 100A
800
700
600
500 500
400 400
300 300
200 200
100 100
0
1234
5 678
RG - Ohms
0
9 10
© 2009 IXYS CORPORATION, All Rights Reserved
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