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IXTY1R4N100P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTY1R4N100P
部品説明 N-Channel Enhancement Mode Avalanche Rated
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTY1R4N100P Datasheet, IXTY1R4N100P PDF,ピン配置, 機能
PolarTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
IXTY1R4N100P
IXTA1R4N100P
IXTP1R4N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
1000
±20
±30
1.4
3.0
1.4
100
V
V
V
V
A
A
A
mJ
10
63
-55 ... +150
150
-55 ... +150
300
260
10..65/2.2..14.6
1.13 / 10
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
0.35
2.50
3.00
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5 4.5 V
±50 nA
5 μA
150 μA
11.8 Ω
VDSS =
ID25 =
RDS(on)
1000V
1.4A
11.8Ω
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Low RDS(on) and QG
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS99737B(08/11)
http://www.Datasheet4U.com

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N-Channel Enhancement Mode Avalanche Rated

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