|
|
IXTY1R4N100PのメーカーはIXYSです、この部品の機能は「N-Channel Enhancement Mode Avalanche Rated」です。 |
部品番号 | IXTY1R4N100P |
| |
部品説明 | N-Channel Enhancement Mode Avalanche Rated | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXTY1R4N100Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PolarTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
IXTY1R4N100P
IXTA1R4N100P
IXTP1R4N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
1000
±20
±30
1.4
3.0
1.4
100
V
V
V
V
A
A
A
mJ
10
63
-55 ... +150
150
-55 ... +150
300
260
10..65/2.2..14.6
1.13 / 10
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
0.35
2.50
3.00
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5 4.5 V
±50 nA
5 μA
150 μA
11.8 Ω
VDSS =
ID25 =
≤RDS(on)
1000V
1.4A
11.8Ω
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Low RDS(on) and QG
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS99737B(08/11)
http://www.Datasheet4U.com
1 Page IXTY1R4N100P IXTA1R4N100P
IXTP1R4N100P
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
7V
6V
5V
2 4 6 8 10 12 14 16
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
1.4
VGS = 10V
1.2 7V
1
6V
0.8
0.6
0.4 5V
0.2
0
0 5 10 15 20 25 30 35
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 0.7A Value vs.
Drain Current
2.4
2.2 VGS = 10V
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
2.2
2
VGS = 10V
7V
1.8
1.6
1.4
1.2 6V
1
0.8
0.6
0.4 5V
0.2
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs.
Junction Temperature
3.0
2.6 VGS = 10V
2.2
I D = 1.4A
1.8
1.4 I D = 0.7A
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2011 IXYS CORPORATION, All Rights Reserved
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ IXTY1R4N100P データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IXTY1R4N100P | N-Channel Enhancement Mode Avalanche Rated | IXYS |